Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting...http://www.google.fr/patents/US7547913?utm_source=gb-gplus-shareBrevet US7547913 - Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
Phase-change memory device using Sb-Se metal alloy and method of fabricating ...
