A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the...http://www.google.fr/patents/US6120600?utm_source=gb-gplus-shareBrevet US6120600 - Double heterojunction light emitting diode with gallium nitride active layer
Double heterojunction light emitting diode with gallium nitride active layer
