A ruthenium layer for a dielectric layer containing a lanthanide layer and a method of fabricating such a combination of ruthenium layer and dielectric layer produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide layer may be formed on the...http://www.google.fr/patents/US7719065?utm_source=gb-gplus-shareBrevet US7719065 - Ruthenium layer for a dielectric layer containing a lanthanide oxide
Ruthenium layer for a dielectric layer containing a lanthanide oxide
