An n-type diffusion layer, an insulating layer and a first aluminum electrode are formed on a p-type silicon substrate. Fe.sup.2+ (divalent Fe) having a vacant orbit not filled with an electron is implanted into a region of the insulating layer to form an impurity atom layer. A second aluminum electrode...http://www.google.fr/patents/US5665978?utm_source=gb-gplus-shareBrevet US5665978 - Nonlinear element and bistable memory device
