A semiconductor device includes a substrate portion having a plurality of diffusion regions defined therein in a non-symmetrical manner relative to a virtual line defined to bisect the substrate portion. The semiconductor device includes a gate electrode level region including a number of conductive...http://www.google.fr/patents/US8129750?utm_source=gb-gplus-shareBrevet US8129750 - Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of transistors with at least two linear-shaped conductive structures of different length
Integrated circuit including at least six linear-shaped conductive ...
