The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen,...http://www.google.fr/patents/US20030211728?utm_source=gb-gplus-shareBrevet US20030211728 - Very low dielectric constant plasma-enhanced CVD films
Very low dielectric constant plasma-enhanced CVD films
Numéro de demande: 10/404,830 Numéro de publication: US 2003/0211728 A1 Date de dépôt: 1 avr. 2003 Brevet délivré: US7205224 ( Date de délivrance 17 avr. 2007)
