A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material that provides a permeable barrier to...http://www.google.fr/patents/US7238963?utm_source=gb-gplus-shareBrevet US7238963 - Self-aligned LDD thin-film transistor and method of fabricating the same
Self-aligned LDD thin-film transistor and method of fabricating the same
