A planarization process for filling spaces between patterned metal features formed over a surface of a semiconductor substrate. The patterned metal features are preferably coated with a dielectric barrier. The dielectric barrier is coated with an material that expands during oxidation or nitridization...http://www.google.fr/patents/US6777346?utm_source=gb-gplus-shareBrevet US6777346 - Planarization using plasma oxidized amorphous silicon
Planarization using plasma oxidized amorphous silicon
