An error recovery technique is used on marginal nonvolatile memory cells. A marginal memory cell is unreadable because it has a voltage threshold (VT) of less than zero volts. By biasing adjacent memory cells, this will shift the voltage threshold of the marginal memory cells, so that it is a positive...http://www.google.fr/patents/US20050094440?utm_source=gb-gplus-shareBrevet US20050094440 - Error recovery for nonvolatile memory
Numéro de demande: 11/003,545 Numéro de publication: US 2005/0094440 A1 Date de dépôt: 3 déc. 2004 Brevet délivré: US7099194 ( Date de délivrance 29 août 2006)
