Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions...http://www.google.fr/patents/US7855038?utm_source=gb-gplus-shareBrevet US7855038 - Mask patterns for semiconductor device fabrication and related methods and structures
Mask patterns for semiconductor device fabrication and related methods and ...
