The invention proposes am improved twin MONOS memory device and its fabrication. The ONO layer is self-aligned to the control gate horizontally. The vertical insulator between the control gate and the word gate does not include a nitride layer. This prevents the problem of electron trapping. The device...http://www.google.fr/patents/US7170132?utm_source=gb-gplus-shareBrevet US7170132 - Twin insulator charge storage device operation and its fabrication method
Twin insulator charge storage device operation and its fabrication method
