A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed...http://www.google.fr/patents/US7592671?utm_source=gb-gplus-shareBrevet US7592671 - Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer
Strained silicon-on-insulator by anodization of a buried p+ silicon ...
