MOSFET having a fine gate structure comprises a semiconductor substrate of a first conductivity type, source and drain regions of a second conductivity type formed in the semiconductor substrate to define a channel region therebetween, a first insulating film provided over the source region, a second...http://www.google.fr/patents/US5640033?utm_source=gb-gplus-shareBrevet US5640033 - MOSFET having fine gate electrode structure
