A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum,...http://www.google.fr/patents/US6806125?utm_source=gb-gplus-shareBrevet US6806125 - Method of manufacturing a thin film transistor device
Method of manufacturing a thin film transistor device
