High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer...http://www.google.fr/patents/US7169619?utm_source=gb-gplus-shareBrevet US7169619 - Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
Method for fabricating semiconductor structures on vicinal substrates using ...
