A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is complete...http://www.google.fr/patents/US5468679?utm_source=gb-gplus-shareBrevet US5468679 - Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
Process for fabricating materials for ferroelectric, high dielectric ...
