An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The...http://www.google.fr/patents/US7998273?utm_source=gb-gplus-shareBrevet US7998273 - Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
Method for producing III-N layers, and III-N layers or III-N substrates, and ...
