A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity...http://www.google.fr/patents/US6624030?utm_source=gb-gplus-shareBrevet US6624030 - Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
Method of fabricating power rectifier device having a laterally graded P-N ...
