A semiconductor structure includes a semiconductor substrate, a planar PMOS device at a surface of the semiconductor substrate, and an NMOS device at the surface of the semiconductor substrate, wherein the NMOS device is a Fin field effect transistor (FinFET)....http://www.google.fr/patents/US7592675?utm_source=gb-gplus-shareBrevet US7592675 - Partial FinFET memory cell
