In accordance with one embodiment of the present invention, a method of forming an etch stop layer in a semiconductor structure is provided. A polysilicon layer on the semiconductor substrate and ions are implanted into the polysilicon layer to form an etch stop layer. An oxide layer can be provided...http://www.google.fr/patents/US7094673?utm_source=gb-gplus-shareBrevet US7094673 - Etch stop layer in poly-metal structures
