A method of providing electrical contact between a gate of a transistor device and an active area remote of the transistor device includes: a) providing a first layer of a conductivity capable material over a gate insulative layer; b) etching the first layer and gate layer to expose a contact area; c)...http://www.google.fr/patents/US5317197?utm_source=gb-gplus-shareBrevet US5317197 - Semiconductor device
