Disclosed is a GaN-based light emitting device which emits a high-luminance light and can emit lights of a wavelength range from ultraviolet to infrared and can emit white light. The GaN-based light emitting device comprises an active layer formed of a GaN-based compound semiconductor which includes...http://www.google.fr/patents/US20020136932?utm_source=gb-gplus-shareBrevet US20020136932 - GaN-based light emitting device