A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the...http://www.google.fr/patents/US6648966?utm_source=gb-gplus-shareBrevet US6648966 - Wafer produced thereby, and associated methods and devices using the wafer
Wafer produced thereby, and associated methods and devices using the wafer
