A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A photoresist plug is formed in the shallow trench and is recessed below the top of the substrate to expose the top...http://www.google.fr/patents/US7071515?utm_source=gb-gplus-shareBrevet US7071515 - Narrow width effect improvement with photoresist plug process and STI corner ion implantation
Narrow width effect improvement with photoresist plug process and STI corner ...
