A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity...http://www.google.fr/patents/US6707068?utm_source=gb-gplus-shareBrevet US6707068 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
