A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion...http://www.google.fr/patents/US5920106?utm_source=gb-gplus-shareBrevet US5920106 - Semiconductor device and method for producing the same
Semiconductor device and method for producing the same
