Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer, a dielectric isolation layer overlying the base...http://www.google.fr/patents/US6699765?utm_source=gb-gplus-shareBrevet US6699765 - Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
Method of fabricating a bipolar transistor using selective epitaxially grown ...
