A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the...http://www.google.fr/patents/US6727549?utm_source=gb-gplus-shareBrevet US6727549 - Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer
Method of delaminating a pre-fabricated transistor layer from a substrate ...
