Methods of forming trench isolation regions include the steps of forming trenches in a semiconductor substrate using an etching mask having openings therein, and then patterning the mask to enlarge the openings. The trenches and the enlarged openings are then filled with an electrically insulating material...http://www.google.fr/patents/US5940716?utm_source=gb-gplus-shareBrevet US5940716 - Methods of forming trench isolation regions using repatterned trench masks
Methods of forming trench isolation regions using repatterned trench masks
