A method for forming a semiconductor device with more than two gates involves the forming of a stack of n-conductive gate electrodes, where n>2. Silicon is formed around the gate stack and the silicon is doped to form source/drain regions. The multiple gates maximize the drive current for a given silicon...http://www.google.fr/patents/US6919250?utm_source=gb-gplus-shareBrevet US6919250 - Multiple-gate MOS device and method for making the same
Multiple-gate MOS device and method for making the same
