For elimination of undesired leakage current, there is disclosed an integrated circuit fabricated in a semiconductor substrate of a first conductivity type which comprises at least first and second semiconductor elements, the first semiconductor element having a first impurity region of a second conductivity...http://www.google.fr/patents/US4758872?utm_source=gb-gplus-shareBrevet US4758872 - Integrated circuit fabricated in a semiconductor substrate
Integrated circuit fabricated in a semiconductor substrate
