The method of the invention induces crystallization in an amorphous semiconductor layer, and includes the steps of: a) producing a patterned metal layer on a first substrate, the metal layer exhibiting a weak level of adherence to the first substrate; b) pressing the metal layer into physical contact...http://www.google.fr/patents/US6277714?utm_source=gb-gplus-shareBrevet US6277714 - Metal-contact induced crystallization in semiconductor devices
Metal-contact induced crystallization in semiconductor devices
