The present invention concerns a method for manufacturing a buried stripe semiconductor laser comprising the steps of depositing by epitaxy at least the heterostructure (51, 52, 53, 54) comprising at least one active material layer (53) on a substrate (50) and then depositing a dielectric mask (55) over...http://www.google.fr/patents/US5043291?utm_source=gb-gplus-shareBrevet US5043291 - Method of manufacturing a broadband high emission power semiconductor laser from a BRS type buried stripe structure, and resulting laser
Method of manufacturing a broadband high emission power semiconductor laser ...
