A method of forming a silicided gate on a substrate having active regions, comprising the steps of: forming a first silicide in the active regions from a first material; and forming a second silicide in the gate from a second material, wherein the first silicide forms a barrier against the second material...http://www.google.fr/patents/US7396767?utm_source=gb-gplus-shareBrevet US7396767 - Semiconductor structure including silicide regions and method of making same
Semiconductor structure including silicide regions and method of making same
