In a DRAM employing a shared sense amplifier method, a bit line select signal falls to the level of ground potential after a potential difference is generated between a pair of bit lines and sense nodes in response to activation of a word line in a self refresh mode for disconnecting the bit line pair...http://www.google.fr/patents/US6434075?utm_source=gb-gplus-shareBrevet US6434075 - Semiconductor circuit device with reduced power consumption in slow operation mode
Semiconductor circuit device with reduced power consumption in slow ...
