In a case where a CF film is used as an interlayer dielectric file for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e g., about 400 to 450 C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages...http://www.google.fr/patents/US6770332?utm_source=gb-gplus-shareBrevet US6770332 - Method for forming film by plasma
