The present invention provides a method for filling an aperture on a substrate by depositing a metal film on the substrate of insufficient thickness to fill the sub half-micron aperture and then annealing the substrate in a low pressure chamber at a temperature below a melting point of the deposited...http://www.google.fr/patents/US6605531?utm_source=gb-gplus-shareBrevet US6605531 - Hole-filling technique using CVD aluminum and PVD aluminum integration
Hole-filling technique using CVD aluminum and PVD aluminum integration
