The present invention provides a method of fabricating an improved gate of a nitride read only memory (NROM) in a semiconductor wafer. A bottom oxide and a silicon nitride layer are first formed on the surface of a silicon substrate in the semiconductor wafer, respectively, followed by injecting a tantalum...http://www.google.fr/patents/US6461949?utm_source=gb-gplus-shareBrevet US6461949 - Method for fabricating a nitride read-only-memory (NROM)
Method for fabricating a nitride read-only-memory (NROM)
