By positioning the source and gate electrodes on the opposite faces of the active layer, these electrodes can be brought closer together and may have their adjacent edges mutually aligned or even overlapping. The series source resistance and channel resistance can be greatly reduced, because of this...http://www.google.fr/patents/US4141021?utm_source=gb-gplus-shareBrevet US4141021 - Field effect transistor having source and gate electrodes on opposite faces of active layer
Field effect transistor having source and gate electrodes on opposite faces ...
