A magnetic sensor utilizing a spin tunnel magneto-resistance effect (TMR), comprising a tunnel insulating film, a first magnetic layer formed on one of the planes of the tunnel insulating film, a second magnetic layer formed on the other plane of the tunnel insulating film, a third magnetic layer containing...http://www.google.fr/patents/US6587318?utm_source=gb-gplus-shareBrevet US6587318 - Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof
Spin tunnel magneto-resistance effect type magnetic sensor and production ...
