A highly reliable thin-film transistor (TFT) having excellent characteristics. A silicon film is grown laterally by adding a metal element such as nickel to promote crystallization. A crystal grain boundary is formed parallel to a gate electrode and around the center of the gate electrode. Thus, the...http://www.google.fr/patents/US5508533?utm_source=gb-gplus-shareBrevet US5508533 - Semiconductor device and method of fabricating same
Semiconductor device and method of fabricating same
