In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film....http://www.google.fr/patents/US6680228?utm_source=gb-gplus-shareBrevet US6680228 - Capacitor in semiconductor device
