A method for making a device and the device itself which utilizes selectively doping part of the channel directly adjacent to the source to improve source-channel junction breakdown voltage is disclosed. This is accomplished through reduced dopant incorporation in the channel directly adjacent to the...http://www.google.fr/patents/US5196361?utm_source=gb-gplus-shareBrevet US5196361 - Method of making source junction breakdown for devices with source-side erasing
Method of making source junction breakdown for devices with source-side erasing
