Disclosed is a semiconductor device. The semiconductor device includes a first gate formed in a trench of a semiconductor substrate, a first gate oxide layer on the semiconductor substrate including the first gate, a first epitaxial layer on the first gate oxide layer, first source and drain regions...http://www.google.fr/patents/US20090261407?utm_source=gb-gplus-shareBrevet US20090261407 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Numéro de demande: 12/496,893 Numéro de publication: US 2009/0261407 A1 Date de dépôt: 2 juil. 2009 Brevet délivré: US7646057 ( Date de délivrance 12 janv. 2010)
