In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, and a data read current is supplied thereto. In the selected memory cell column, a read gate drives the respective voltages on a read data bus pair, according to the...http://www.google.fr/patents/US6856539?utm_source=gb-gplus-shareBrevet US6856539 - Thin film magnetic memory device including memory cells having a magnetic tunnel junction
Thin film magnetic memory device including memory cells having a magnetic ...
