A one transistor (1T-RAM) bit cell and method for manufacture are provided. A metal-insulator-metal (MIM) capacitor structure and method of manufacturing it in an integrated process that includes a finFET transistor for the 1T-RAM bit cell is provided. In some embodiments, the finFET transistor and MIM...http://www.google.fr/patents/US20070080387?utm_source=gb-gplus-shareBrevet US20070080387 - Method and structure for a 1T-RAM bit cell and macro
Method and structure for a 1T-RAM bit cell and macro
Numéro de demande: 11/246,318 Numéro de publication: US 2007/0080387 A1 Date de dépôt: 7 oct. 2005 Brevet délivré: US7425740 ( Date de délivrance 16 sept. 2008)
