A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method...http://www.google.fr/patents/US20040104439?utm_source=gb-gplus-shareBrevet US20040104439 - Method of depositing barrier layer from metal gates
Method of depositing barrier layer from metal gates
Numéro de demande: 10/430,811 Numéro de publication: US 2004/0104439 A1 Date de dépôt: 5 mai 2003 Brevet délivré: US6858524 ( Date de délivrance 22 févr. 2005)
