A semiconductor pressure sensor utilizes single-crystal silicon piezoresistive gage elements dielectrically isolated by silicon oxide from other such elements, and utilizes an etched silicon substrate with an etch stop. P-type implants form p-type piezoresistive gage elements and form p+ interconnections...http://www.google.fr/patents/US5672551?utm_source=gb-gplus-shareBrevet US5672551 - Method for manufacturing a semiconductor pressure sensor with single-crystal silicon diaphragm and single-crystal gage elements
Method for manufacturing a semiconductor pressure sensor with single-crystal ...
