According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 μm or more is formed. An impurity...http://www.google.fr/patents/US7183144?utm_source=gb-gplus-shareBrevet US7183144 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
