A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface...http://www.google.fr/patents/US6531739?utm_source=gb-gplus-shareBrevet US6531739 - Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
Radiation-hardened silicon-on-insulator CMOS device, and method of making ...
